However, to create a bidirectional switch, two MOSFETs or two IGBTs plus two diodes must be connected in a common-emitter configuration, which significantly increases the part count for bidirectional power converters. “Coming up with a version of technology that is really a bidirectional switch targeted for applications that require faster switching speeds, for example, using silicon carbide can be an option,” Brdar said. This makes it suitable for bidirectional applications like voltage source inverters or battery chargers, as well as unidirectional applications. The device, with its two control inputs, can block voltage in both polarities and conduct current in both directions. “By incorporating all the features into one die using both sides of the wafer, a bidirectional switch can be made without using pairs of IGBTs and diodes like traditional bidirectional circuits,” Brdar said. Lastly, B-TRAN is a bidirectional bipolar junction transistor equipped with a control on both sides for enhanced performance and inherent bidirectionality. An IGBT is similar to a MOSFET, but with an additional doping layer to change its behavior. The MOSFET combines the resistor and diode functions and has a switch to select between modes. A diode is formed by adding a heavily doped layer of N material on one surface of a P-type resistor, allowing current to flow in one direction only. Next, we have a resistor made of doped silicon that can resist the flow of current due to impurities added, either N-type or P-type. The first one is called “open,” which is made of pure silicon and is not useful for conducting electricity, but it’s great for insulating. In Figure 1, we have a variety of electronic devices made of silicon. It is considered the logical endpoint of the evolution of power-semiconductor topologies due to its unique combination of performance, reliability and efficiency.įigure 1: Architecture of different devices, including B-TRAN We’re processing the wafer on both sides, so you have identical features on either side of the wafer that require very close alignment of those features.” Device structureī-TRAN can be considered the ultimate development of power-semiconductor topologies. These results demonstrate the revolutionary potential of B-TRAN as a power-conversion technology.īrdar explained the uniqueness of B-TRAN: “When you think about a conventional semiconductor power switch, you’re processing the wafer on one side. During silicon testing, the B-TRAN demonstrated a VCE(on) of only 0.6 V at a 30-A discharge current, with a driving power of only 8.4 W (1.2 V 7 A), resulting in a total power loss of 26.4 W, which is significantly less than that of IGBTs. With over 70 patents globally, B-TRAN presents a promising technology for boosting the efficiency and effectiveness of power-conversion applications.ī-TRAN offers significant performance enhancements compared to conventional power switches such as SCRs, IGBTs, and MOSFETs. “Our aim is to develop a version of our technology that is optimized for bidirectional switching at high speeds, utilizing silicon and later silicon carbide,” Daniel Brdar, CEO of Ideal Power, said during an interview with Power Electronics News. To achieve optimal performance and efficiency, conventional power switches have limitations. From electric vehicles to renewable energy generation and energy storage, these elements are essential for achieving high efficiency and low emissions during the transition to a sustainable future. Semiconductor power switches are indispensable for the efficient and pure conversion of power in a variety of applications. This four-quadrant power switch provides exceptional performance by providing an extremely low forward voltage drop and minimizing switching losses. has developed a novel approach to addressing the challenges of power conversion. With its cutting-edge bidirectional bipolar junction transistor (B-TRAN), Ideal Power Inc.
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